Extreme Ultraviolet Lithography

Extreme ultraviolet lithography (EUVL) is a critical technology for creating ever-smaller features on semiconductor chips, aiming to overcome the resolution limits of previous methods. Current research focuses on improving EUVL's accuracy and efficiency through machine learning models, including neural networks for lithography simulation and defect detection, and evolutionary algorithms for optimizing mask design and multiple patterning layout decomposition. These advancements address challenges like stochastic defects, process variations, and computational cost, ultimately impacting the fabrication of advanced integrated circuits and enabling continued progress in Moore's Law.