hep-exJul 13, 2026

Machine Learning-Based Reconstruction for Resistive Silicon Sensors

Authors: Alexander AokiGaetano BaroneLeena DiehlGabriele GiacominiVagelis GkougkousisHanshal GoyalRohan KherDaniel Li+8 more

Organizations: Brown University, 182 Hope Street, Providence, RI 02912, USA · University of Zurich · Brookhaven National Laboratory · Northwestern University

Abstract

Low-Gain Avalanche Diodes (LGADs) and AC-coupled Low-Gain Avalanche Diodes (AC-LGADs) are promising technologies for precision timing and four-dimensional tracking. In AC-LGADs, the AC pad is coupled to the resistive n+^{+} layer through a dielectric layer, while the gain layer remains unsegmented. This structure provides a 100% fill factor and enables good spatial resolution with a relaxed readout pitch. The same signal-sharing mechanism that makes interpolation possible complicates the readout: charge spreads across multiple pads, the useful information can approach the electronic-noise threshold, and matrix-inversion approaches can become computationally challenging and sensitive to off-diagonal noise. In this work, we study machine-learning-based reconstruction and compression for resistive silicon sensors. We use full-waveform information from correlated pads to regularise the reconstruction and extract spatial information beyond what is available from binary readouts or reduced-amplitude summaries. We first introduce recurrent neural network models based on LSTM layers, which provide a proof-of-concept implementation for full-waveform reconstruction and have been tested for FPGA deployment using \hls. We also study routes towards bandwidth reduction with waveform rasterisation and window-selection methods, and extend the approach beyond the first model to topology-agnostic transformer-based architectures that use pad coordinates as part of the input. These models are designed to support arbitrary pad counts and geometries, mitigate edge distortions, preserve approximately 10 μm10~μ\mathrm{m} position resolution for 500 μm×500 μm500~μ\mathrm{m}\times500~μ\mathrm{m} pitched sensors, and guide future resistive-silicon sensor designs

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