Resistive Random Access Memory

Kolmogorov-Arnold Networks (KANs) shift neural computation from linear layers to learnable nonlinear edge functions, but implementing these nonlinearities efficiently in hardware remains an open challenge. Here we introduce a physical analogue KAN architecture in which edge functions are realized in materia using reconfigurable nonlinear-processing units (RNPUs): multi-terminal nanoscale silicon devices whose input-output characteristics are tuned via control voltages. By combining multiple RNPUs into an edge processor and assembling these blocks into a reconfigurable analogue KAN (aKAN) architecture with integrated mixed-signal interfacing, we establish a realistic system-level hardware implementation that enables compact KAN-style regression and classification with programmable nonlinear transformations. Using experimentally calibrated RNPU models and hardware measurements, we demonstrate accurate function approximation across increasing task complexity while requiring fewer or comparable trainable parameters than multilayer perceptrons (MLPs). System-level estimates indicate an energy per inference of roughly 200 pJ and an end-to-end inference latency of roughly 0.6 $μ$s for a representative workload, corresponding to over 100$\times$ reduction in energy accompanied by $>$10$\times$ reduction in area compared to a digital fixed-point MLP at similar approximation error. These results establish RNPUs as scalable, hardware-native nonlinear computing primitives and identify analogue KAN architectures as a realistic silicon-based pathway toward energy-, latency-, and footprint-efficient analogue neural-network hardware, particularly for edge inference.

Virtual analog (VA) modeling methods seek to emulate analog audio hardware using digital signal processing (DSP). Modeling approaches fall into three broad categories: white-box methods, which use detailed device knowledge for accurate simulation; gray-box methods that use generic DSP blocks to model the system; and black-box methods, which rely solely on opaque models learned from input-output data. A category of architectures used widely in black-box modeling are recurrent neural networks (RNNs). To model device controls, the control values can be provided as conditioning input to the network. However, when the conditioning is time-varied, the models are susceptible to producing noise artifacts. Regularization of the RNN dynamics significantly reduces these artifacts, though at a loss in modeling accuracy. This paper closes the dynamics regularization quality gap by introducing deep control-conditioned LSTMs and a gammatone filterband (GFB) loss. Experiments indicate that the proposed method achieves comparable modeling performance as unregularized baselines while avoiding the noise artifacts caused by time-varying control inputs.

Memristor-based Spiking Neural Networks (SNNs) with temporal spike encoding enable ultra-low-energy computation, making them ideal for battery-powered intelligent devices. This paper presents a circuit-level memristive spiking neural network (SNN) architecture trained using a proposed novel supervised in-situ learning algorithm inspired by spike-timing-dependent plasticity (STDP). The proposed architecture efficiently implements lateral inhibition and the refractory period, eliminating the need for external microcontrollers or ancillary control hardware. All synapses of the winning neurons are updated in parallel, enhancing training efficiency. The modular design ensures scalability with respect to input data dimensions and output class count. The SNN is evaluated in LTspice for pattern recognition (using 5x3 binary images) and classification tasks using the Iris and Breast Cancer Wisconsin (BCW) datasets. During testing, the system achieved perfect pattern recognition and high classification accuracies of 99.11% (Iris) and 97.9% (BCW). Additionally, it has demonstrated robustness, maintaining an average recognition rate of 93.4% under 20% input noise. The impact of stuck-at-conductance faults and memristor device variations was also analyzed.

Using Resistive Random Access Memory (RRAM) crossbars in Computing-in-Memory (CIM) architectures offers a promising solution to overcome the von Neumann bottleneck. Due to non-idealities like cell variability, RRAM crossbars are often operated in binary mode, utilizing only two states: Low Resistive State (LRS) and High Resistive State (HRS). Binary Neural Networks (BNNs) and Ternary Neural Networks (TNNs) are well-suited for this hardware due to their efficient mapping. Existing software projects for RRAM-based CIM typically focus on only one aspect: compilation, simulation, or Design Space Exploration (DSE). Moreover, they often rely on classical 8 bit quantization. To address these limitations, we introduce CIM-Explorer, a modular toolkit for optimizing BNN and TNN inference on RRAM crossbars. CIM-Explorer includes an end-to-end compiler stack, multiple mapping options, and simulators, enabling a DSE flow for accuracy estimation across different crossbar parameters and mappings. CIM-Explorer can accompany the entire design process, from early accuracy estimation for specific crossbar parameters, to selecting an appropriate mapping, and compiling BNNs and TNNs for a finalized crossbar chip. In DSE case studies, we demonstrate the expected accuracy for various mappings and crossbar parameters. CIM-Explorer can be found on GitHub.