High-density through-substrate vias (TSVs) enable 2.5D/3D heterogeneous integration but introduce significant signal-integrity and thermal-reliability challenges due to electrical coupling, insertion loss, and self-heating. Conventional full-wave finite-element method (FEM) simulations provide high accuracy but become computationally prohibitive for large design-space exploration. This work presents a scalable electro--thermal modeling and optimization framework that combines physics-informed analytical modeling, graph neural network (GNN) surrogates, and full-wave sign-off validation. A multi-conductor analytical model computes broadband S-parameters and effective anisotropic thermal conductivities of TSV arrays, achieving 5%--10% relative Frobenius error (RFE) across array sizes up to 15×15. A physics-informed GNN surrogate (TSV-PhGNN), trained on analytical data and fine-tuned with HFSS simulations, generalizes to larger arrays with mean RFE below 5% in-distribution. The surrogate is integrated into a multi-objective Pareto optimization framework targeting reflection coefficient, insertion loss, worst-case crosstalk (NEXT/FEXT), and effective thermal conductivity. Millions of TSV configurations can be explored within minutes, enabling exhaustive layout and geometric optimization that would be infeasible using FEM alone. Final designs are validated with Ansys HFSS and Mechanical, showing strong agreement. The proposed framework enables rapid electro--thermal co-design of TSV arrays while reducing per-design evaluation time by more than six orders of magnitude.
Figures & tables
Fig. 1 : Comparison of representative TSV modeling and optimization frameworks in terms of scalability, frequency range, and computational cost.
Fig. 2 : Comparison of the analytical and TSV-PhGNN-based coupled electrothermal simulation frameworks. In both cases, S-parameters are used to extract TSV Joule-heating dissipation, which is then mapped to the ETC-based steady-state thermal solver. In the analytical loop, temperature-dependent resistivity is updated iteratively, whereas in the surrogate loop, the updated temperature is fed back to TSV-PhGNN, until convergence is reached.
Fig. 3 : Overview of the proposed ML-assisted optimization framework. A physics-informed GNN is first pre-trained on large-scale RLCG-based analytical data and then fine-tuned on high-fidelity Ansys HFSS data through Sim-to-Sim transfer learning. The TSV array is modeled as a geometry-, frequency-, and temperature-aware graph, and the trained surrogate is embedded in the coupled electrothermal flow shown in Fig. 2 .
Fig. 4 : Per-sample runtime comparison between the ML surrogate, the analytical solver, and Ansys HFSS versus TSV grid size ( N×N ).
Fig. 5 : Magnitude comparison (in dB) of selected S-parameters obtained from HFSS full-wave simulations and the proposed analytical model. The corresponding TSV array top view is illustrated in the inset, where red circles denote signal TSVs and blue circles denote ground TSVs, arranged on a uniform pitch grid.
Fig. 6 : Comparison between the proposed homogenized ETC model and high-fidelity FEM-based Ansys Mechanical simulations for fully populated and sparse TSV arrays under natural and forced convection boundary conditions. The percentage above each bar denotes the relative error with respect to the corresponding FEM solution.
Fig. 7 : Total thermal analysis runtime comparison between the full detailed model and the ETC-based model.
arm
split
RFE
MAE NEXT
Worst victim NEXT (dB)
recip residual
Reference (full proposed model)
3–7
0.0288
0.0045
0.89
0.000000
8–15
0.0331
0.0023
1.07
0.000000
16–25
0.0982
0.0030
3.19
0.000000
w/o FiLM (concatenation)
3–7
0.0626
0.0092
1.53
0.000000
8–15
0.1129
0.0087
3.01
0.000000
16–25
0.1505
0.0060
6.52
0.000000
TABLE VI : Architecture ablation (matched protocol; HFSS-only, identical hyperparameters and seed). “Reference” = full model (FiLM, reciprocity averaging, passivity penalty λ=0.05 ); each other arm removes one component. The validation-split label “ N1 – N2 ” denotes the array-size bucket from N1×N1 through N2×N2 . “Worst victim NEXT (dB)” = absolute dB error at the largest-coupling NEXT pair; “recip residual” = mean ∣Sij−Sji∣ on the raw edge head.
Fig. 8 : Coupled electrothermal trajectories for the representative 4×4 testcase. GNN+ETC, HSPICE+ETC, and the Ansys HFSS ↔ Mechanical reference are compared for: (a) Tsub , (b) Tdie , (c) Pdie(T) , and (d) ∣ΔT∣ convergence.
Parameters
Symbol
Value
TSV radius
rTSV
5μm
TSV height
hTSV
100μm
Pitch between adjacent TSVs
p
60μm
Thickness of SiO 2 layer
tox
0.5μm
Copper conductivity
σCu
5.8×107S/m
Silicon conductivity
σSi
10S/m
TABLE VII : TSV Array Physical and Geometrical Parameters.
Fig. 9 : Near-end (NEXT) and far-end (FEXT) crosstalk at 15 GHz for the worst-case victim TSV, comparing the proposed signal–ground assignment with the state-of-the-art configuration in [ 22 ] . Insets show the corresponding TSV layouts. Bars denote the proposed design and line markers the results reported in [ 22 ] . The horizontal dashed lines indicate the worst-case total crosstalk, showing an improvement of (a) 11 dB in the 12-signal ( 5×5 ) array and (b) 18 dB in the 9-signal ( 5×5 ) array.
Fig. 10 : Results of a design space exploration 9-15 signal TSVs in a 5×5 array. Near-end (NEXT) and far-end (FEXT) crosstalk at 15 GHz for the worst-case victim TSV in the optimized signal–ground assignment (14 signal TSVs). The inset shows the corresponding TSV layout.
N
Search space ∣S∣
NSGA-II HV mean [min, max]
Random HV mean [min, max]
Ratio
7×7
49C24≈6.5×1013
0.311 [0.288, 0.345]
0.173 [0.076, 0.255]
1.79×
9×9
81C39≈8.1×1022
0.431 [0.287, 0.541]
0.137 [0.109, 0.187]
3.15×
11×11
121C58≈4.4×1035
0.797 [0.718, 0.862]
0.453 [0.106, 0.685]
1.76×
TABLE VIII : NSGA-II versus random-search hypervolume at 10,000 surrogate evaluations (3 seeds). Search space ∣S∣=N2Cnsig , nsig=round(0.48N2) ; objectives: −∣S21∣ , max∣S11∣ , max∣NEXT∣ , max∣FEXT∣ in dB.
Parameters
Symbol
Value
TSV radius
rTSV
2→6μm
TSV height
hTSV
60→100μm
Pitch between adjacent TSVs
p
20→60μm
Thickness of SiO 2 layer
tox
0.5→3μm
TABLE IX : Geometrical Parameters of TSV Array Sweep
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Leonid Popryho, Ayoub Sadeghi, Inna Partin-Vaisband
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Min-Hui Kim, Khushi Sharma, Sarah Zhang +1
Graduate School of Semiconductor Materials and Devices, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea · Materials Science and Engineering, National University of Singapore, Singapore · Materials Science and Engineering, Cornell University, Ithaca, NY, USA +1
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Xinling Yu, Yixing Li, Ziyue Liu +4
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 USA · Cadence Design Systems, Austin, TX 78759 USA · Department of Computer Science, University of California, Santa Barbara, CA 93106 USA +1