Designing photonic integrated circuits requires accurate electromagnetic field simulations, which remain computationally expensive even for simple device geometries. We present PIC-Flow, a generative neural surrogate that predicts electromagnetic field distributions for photonic devices given their geometry and operating wavelength as an alternative to costly finite-difference time-domain (FDTD) simulations. Our approach combines three key ideas: (i) conditional flow matching as the generative framework, learning a velocity field that transports Gaussian noise to physically valid field solutions; (ii) a real-valued U-Net operating on split real and imaginary field channels; and (iii) physics-constrained training through a Helmholtz residual loss enforcing ∇2Ez+k02εEz=0. We introduce an interface-aware masking scheme for the Helmholtz residual that excludes dielectric boundary pixels where finite-difference stencil errors dominate, yielding a physically meaningful compliance metric. The data set consists of 22,500 ground-truth FDTD simulations split evenly between multimode interferometers, Y-branches, and directional couplers at λ=1.55μm in an 80/10/10 split between training, validation, and test sets. We evaluate ablations on the network against the held out test devices and also show that the model generalizes to held out device classes such as S-bends, tapers, and cascaded Y-branches. Rather than a drop-in replacement for FDTD, this work establishes a foundation that, with broader data coverage, more compute, and further training optimization, could scale toward broadband, device-agnostic field prediction with dramatically improved runtime for rapid design-space exploration of complex photonic devices and circuits.
Neural field surrogates can accelerate photonic design loops, but a surrogate that looks accurate in global field error can still mis-rank candidate devices when the final decision depends on localized output-port readouts. This risk is acute in propagation-dominated MMI splitters and couplers, where port power, splitting, phase, and coupling are determined by accumulated modal interference and output-window aggregation rather than by average field similarity alone. We study this field-to-design mismatch through a Field/Mediator/Readout view that separates dense complex-field error from propagation-profile and output-window errors before port aggregation. To align the surrogate with this chain, we propose PaNO, a propagation-aligned neural operator that keeps the full-field prediction interface while organizing latent states around local boundary structure, transverse modal content, axial propagation, and cross-mode interaction. We also evaluate PaNO-R2, an output-aware feedback variant for residual field components near the port region. On a 15-wavelength tunable 3×3 MMI benchmark with 4608 held-out fields, PaNO lowers NeurOLight's port-power error from 0.2018 to 0.0739 despite slightly higher cMAE, showing that global field accuracy alone is not sufficient for design-relevant readout fidelity. PaNO-R2 attains the best cMAE, propagation-profile error, output-profile error, and port-power error, reducing NeurOLight's port-power and output-profile errors by 72.7% and 72.5%.
Physical simulations for intricate geometries with path-dependent constitutive models face difficulties due to the enormous computational cost they require. Recently, the emergence of generative AI models, which succeed in image and video synthesis tasks, has provided a promise to further improve simulations. Although U-Net-based denoising diffusion probabilistic models (DDPMs) have been adopted for elastic stress field generation, they typically require hundreds of sampling steps, and applications of generative models to path-dependent, e.g. plastic, stress fields remain very limited. In this work, we propose a novel flow matching (FM) model based on a transformer backbone for high-resolution path-dependent stress field generation with stochastic loading-unloading paths and geometry. The proposed model operates within the latent space of a variational autoencoder (VAE) and formulates the simulation of plastic fields as a video synthesis task, directly generating the stress fields across all time steps. Meanwhile, we design a non-Gaussian source distribution for flow matching, such that crossings among conditional transport paths are reduced during training. This enables our model to generate satisfactory samples in one step without relying on distillation. In addition, we introduce token-level loading embeddings and two auxiliary networks to further enhance the model performance in path-dependent simulation. The results demonstrate that, even with a limited training dataset, our model can accurately generate high-resolution path-dependent fields. It is much more computationally efficient than finite element analysis, providing a speedup of 6 to 7 times over FEM on CPUs and approximately two orders of magnitude speedup on consumer-grade GPUs.
Technology computer-aided design (TCAD) semiconductor device simulation is fundamentally constrained by the high computational cost of iteratively solving coupled drift-diffusion equations. Existing ML surrogates either reduce internal physics to macroscopic scalar regressions, or rely on single-step mappings that lack the iterative refinement required to resolve stiff, coupled fields. To address this, we introduce PCGD, a Physics-Guided Conditional Graph Diffusion framework operating natively on unstructured TCAD meshes to predict coupled electrostatic and carrier density fields. PCGD employs a Condition-Aware MeshGraphNet denoiser that explicitly injects boundary conditions and device structure context via global cross-attention. By augmenting data-driven denoising with a physics-guided hybrid objective that integrates exponent-free quasi-Fermi gradient matching with noise-aware PDE residuals, PCGD progressively enforce physical constraints in the iterative diffusion trajectory. This strategy successfully bypasses the numerical instabilities typical of stiff drift-diffusion equations. Evaluated on a challenging mixed PN/MOS benchmark, PCGD significantly outperforms deterministic one-step regression (1.207% error) and local diffusion (1.585% error) baselines by achieving a sub-percent mean relative field error of 0.835%, while concurrently reducing maximum PDE residual errors by nearly three orders of magnitude compared to pure diffusion. It also transfers robustly to unseen SOI topologies (0.815% error) via LoRA adaptation, using 5.30× less data and 14.34× fewer parameters than full fine-tuning. Ultimately, PCGD bridges the computational efficiency of generative surrogates with the rigorous physical fidelity of traditional TCAD, unlocking highly scalable, field-level analysis for robust device engineering.