Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model

High-fidelity TCAD simulation of drift-diffusion transport remains the workhorse of emerging FinFET device design, but it is computationally expensive, especially for 3D structures where runtime escalates steeply with mesh complexity. This sharply limits multi-objective design space exploration. Existing machine-learning surrogates map a fixed set of design parameters to a few scalar device metrics, discarding the underlying physics and losing transferability across device geometries and families. A physics-informed graph attention network (GAT) surrogate is proposed. It operates directly on the tetrahedral TCAD mesh and predicts, at every mesh node, the electrostatic potential together with the electron and hole quasi-Fermi levels, the fundamental unknowns of the drift-diffusion system. Training combines a data loss with finite-volume current-continuity residuals, embedding carrier-transport physics into the objective. Operating on the mesh as a graph, the surrogate inherits size generalization: a model trained on few-fin meshes applies unchanged to substantially larger arrays, bounded at inference only by GPU memory. Per-node uncertainty from a deep ensemble drives an active-learning loop that screens large candidate pools in seconds and forwards only the most informative designs for full simulation. Benchmarked against Sentaurus Device on multi-fin tri-gate FinFETs, the surrogate reproduces the three drift-diffusion fields with sub-volt per-field RMSE and reaches a per-design throughput orders of magnitude higher than the full simulator. The advantage grows with device size: on large multi-fin arrays that are prohibitively slow to simulate directly, inference still completes in under a second per device, enabling Pareto-front exploration across device scales infeasible for direct TCAD sweeps.

Physics-informed neural networks (PINNs) offer a promising framework for modeling semiconductor devices, yet standard architectures struggle with severe numerical stiffness and multiscale spatial discrepancies inherent to oxide heterostructures. Here, we demonstrate a cascaded PINN architecture coupled with a custom second-order Chebyshev second kind polynomial spectral optimizer (DSO V2 Hybrid) to model ion-electronic drift-diffusion transport in Pt/SrTiO$_3$/Si memristive heterostructures across a 20 nm STO film on a 380 $μ$m Si substrate. By isolating potential, carrier density, and vacancy transport into four sequentially trained sub-neural-networks, our model circumvents condition numbers exceeding $10^{16}$ without operator splitting. The trained surrogate reproduces experimental conductive-AFM current-voltage hysteresis ($R^2 > 0.96$) while ensuring strict Poisson consistency across continuous space. Compared to conventional finite-element solvers (e.g., COMSOL), the PINN surrogate enables differentiable inverse parameter estimation and linear time inference.

High-density through-substrate vias (TSVs) enable 2.5D/3D heterogeneous integration but introduce significant signal-integrity and thermal-reliability challenges due to electrical coupling, insertion loss, and self-heating. Conventional full-wave finite-element method (FEM) simulations provide high accuracy but become computationally prohibitive for large design-space exploration. This work presents a scalable electro--thermal modeling and optimization framework that combines physics-informed analytical modeling, graph neural network (GNN) surrogates, and full-wave sign-off validation. A multi-conductor analytical model computes broadband S-parameters and effective anisotropic thermal conductivities of TSV arrays, achieving $5\%$--$10\%$ relative Frobenius error (RFE) across array sizes up to $15\times15$. A physics-informed GNN surrogate (TSV-PhGNN), trained on analytical data and fine-tuned with HFSS simulations, generalizes to larger arrays with mean RFE below $5\%$ in-distribution. The surrogate is integrated into a multi-objective Pareto optimization framework targeting reflection coefficient, insertion loss, worst-case crosstalk (NEXT/FEXT), and effective thermal conductivity. Millions of TSV configurations can be explored within minutes, enabling exhaustive layout and geometric optimization that would be infeasible using FEM alone. Final designs are validated with Ansys HFSS and Mechanical, showing strong agreement. The proposed framework enables rapid electro--thermal co-design of TSV arrays while reducing per-design evaluation time by more than six orders of magnitude.