ChargeFlow: Flow-Matching Refinement of Charge-Conditioned Electron Densities
Organizations: Deakin University, Geelong, VIC 3216, Australia
Abstract
Accurate charge densities are central to electronic-structure theory, but computing charge-state-dependent densities with density functional theory remains too expensive for large-scale screening and defect workflows. We present ChargeFlow, a flow-matching refinement model that transforms a charge-conditioned superposition of atomic densities into the corresponding DFT electron density on the native periodic real-space grid using a 3D U-Net velocity field. Trained on 9,502 charged Materials Project-derived calculations and evaluated on an external 1,671-structure benchmark spanning perovskites, charged defects, diamond defects, metal-organic frameworks, and organic crystals, ChargeFlow is not uniformly best on every in-distribution class but is strongest on problems dominated by nonlocal charge redistribution and charge-state extrapolation, improving deformation-density error from 3.62% to 3.21% and charge- response cosine similarity from 0.571 to 0.655 relative to a ResNet baseline. The predicted densities remain chemically useful under downstream analysis, yielding successful Bader partitioning on all 1,671 benchmark structures and high-fidelity electrostatic potentials, which positions flow matching as a practical density-refinement strategy for charged materials.
Figures & tables
| Split / class | Samples | Unique parents | Charge states |
|---|---|---|---|
| MP charged-density train | 9502 | 4065 | |
| MP charged-density dev hold-out | 2376 | 1952 | |
| Perovskites | 159 | 40 | |
| Charged defects | 1149 | 588 | |
| Multisite diamond defects | 54 | 18 | |
| Special diamond defects | 42 | 14 |
| System Type | ChargeFlow | ChargeFlowL2 | ResNet | U-Net | CDeepDFT |
|---|---|---|---|---|---|
| Perovskites | 5.41 | 7.12 | 3.74 | 3.58 | 3.03 |
| Charged Defects | 6.46 | 9.00 | 4.68 | 5.53 | 5.26 |
| Multisite Defects | 6.15 | 6.43 | 8.60 | 8.59 | 9.67 |
| Special Defects | 6.78 | 7.73 | 8.50 | 7.34 | 9.54 |
| MOFs | 7.56 | 11.29 | 7.86 | 8.78 | 10.80 |
| Extreme MOFs | 7.84 | 10.80 | 8.50 | 7.96 | nan |
| Metric | ChargeFlow | ResNet |
|---|---|---|
| Bader successful materials | 1671 / 1671 | 1590 / 1671 |
| Bader atom-level | 0.9901 | 0.9833 |
| Bader atom-level MAE (e) | 0.2369 | 0.2853 |
| Potential mean per-material MAE (eV) | 1.3326 | 1.1700 |
| Potential mean per-material | 0.9954 | 0.9928 |
Computational Materials Science
Computational materials science uses computation and data-driven models to predict, explain, and design materials and their properties.
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