PALTO: Physics-Informed Active Learning for Tri-Gate FinFET Design Optimization for Vertical Power Delivery

High-fidelity TCAD simulation of drift-diffusion transport remains the workhorse of emerging FinFET device design, but it is computationally expensive, especially for 3D structures where runtime escalates steeply with mesh complexity. This sharply limits multi-objective design space exploration. Existing machine-learning surrogates map a fixed set of design parameters to a few scalar device metrics, discarding the underlying physics and losing transferability across device geometries and families. A physics-informed graph attention network (GAT) surrogate is proposed. It operates directly on the tetrahedral TCAD mesh and predicts, at every mesh node, the electrostatic potential together with the electron and hole quasi-Fermi levels, the fundamental unknowns of the drift-diffusion system. Training combines a data loss with finite-volume current-continuity residuals, embedding carrier-transport physics into the objective. Operating on the mesh as a graph, the surrogate inherits size generalization: a model trained on few-fin meshes applies unchanged to substantially larger arrays, bounded at inference only by GPU memory. Per-node uncertainty from a deep ensemble drives an active-learning loop that screens large candidate pools in seconds and forwards only the most informative designs for full simulation. Benchmarked against Sentaurus Device on multi-fin tri-gate FinFETs, the surrogate reproduces the three drift-diffusion fields with sub-volt per-field RMSE and reaches a per-design throughput orders of magnitude higher than the full simulator. The advantage grows with device size: on large multi-fin arrays that are prohibitively slow to simulate directly, inference still completes in under a second per device, enabling Pareto-front exploration across device scales infeasible for direct TCAD sweeps.

This work presents a machine learning framework that leverages an autoencoder (AE) for the efficient modeling of FinFET. We first calibrated a BSIM-CMG model to generate a dataset of current-voltage (ID-VG) characteristics. This data was used to train an autoencoder that compresses full I-V curves into a low-dimensional latent space, which intrinsically encodes key device physics. A key innovation is the explicit incorporation of parameter such as drain to source voltage (VDS) as an input feature, enhancing the model ability to capture bias dependent variation. The trained model successfully reconstructs full I-V curves and directly extracts critical device metrics including threshold voltage (VTH), subthreshold slope (SS), and peak transconductance (gm). This approach demonstrates that data driven compact models, built from actual characterization data, can achieve high accuracy with minimal training data, providing a powerful tool for rapid device characterization, modelling and circuit level simulation.

Accurately predicting the performance of active radio frequency (RF) circuits is essential for modern wireless systems but remains challenging due to highly nonlinear behavior and the high computational cost of traditional simulation tools. Existing machine learning (ML) surrogates often require large datasets to generalize across various topologies or are not accurate on held-out circuits. This work presents a lightweight, data-efficient, and topology-aware graph neural network (GNN) framework for predicting key performance metrics of active RF circuit classes, such as low-noise amplifiers (LNAs), mixers, voltage-controlled oscillators (VCOs), power amplifiers (PAs), and voltage amplifiers (VAs). The proposed framework employs RFIC domain-informed feature indexing to enable cross-topology adaptability by cheap encoding of functional device semantics (e.g., differential pair and varactor transistors) and efficient knowledge transfer. The surrogate model represents circuits using device-terminal graph abstractions to preserve fine-grained connectivity and transistor-level symmetry. The final model is generalized to a wide variety of classes by being trained in parallel. Experimental results demonstrate accurate modeling of multimodal and heavy-tailed RF performance distributions, achieving an average mean relative error (MRE) of 2.71% across nineteen topologies, an improvement of 3.3x and 20x faster in training over prior art, and the generalization to held-out topologies is improved by ~26.2x. Furthermore, this work shows ~36x training data efficiency compared to state-of-the-art, demonstrating its effectiveness for scalable and deployment-ready RF design automation.