This work presents a machine learning framework that leverages an autoencoder (AE) for the efficient modeling of FinFET. We first calibrated a BSIM-CMG model to generate a dataset of current-voltage (ID-VG) characteristics. This data was used to train an autoencoder that compresses full I-V curves into a low-dimensional latent space, which intrinsically encodes key device physics. A key innovation is the explicit incorporation of parameter such as drain to source voltage (VDS) as an input feature, enhancing the model ability to capture bias dependent variation. The trained model successfully reconstructs full I-V curves and directly extracts critical device metrics including threshold voltage (VTH), subthreshold slope (SS), and peak transconductance (gm). This approach demonstrates that data driven compact models, built from actual characterization data, can achieve high accuracy with minimal training data, providing a powerful tool for rapid device characterization, modelling and circuit level simulation.
This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems. Conventional TCAD-based approaches are computationally intensive and insufficient for navigating the high-dimensional, nonlinear design space of advanced GaN devices. To address this, a physics-informed active learning framework is used to intelligently guide simulations, accelerating convergence while preserving accuracy. This ML-guided approach enables the discovery of optimal configurations by efficiently exploring key structural parameters -- most notably the GaN-to-AlGaN thickness ratio -- a long-standing focus of debate in device design. By systematically exploring key structural parameters, two optimized devices with aggressively scaled gate-to-drain lengths are identified. Single-fin, multi-channel simulations show that deviceD2, with a thinner GaN channel relative to the AlGaN barrier, achieves higher drive current. However, in a 300-fin configuration, deviceD1 outperforms deviceD2 by delivering 3.3,A at 0.49ohm on-resistance -- approximately 2× better -- despite slightly higher parasitics. Both devices operate in a normally-off mode. Based on an application-specific figure of merit, deviceD1 achieves 5,pC⋅ohm, demonstrating 2× greater switching efficiency than deviceD2, while both designs outperform industrial benchmarks from different performance standpoints.
Ayoub Sadeghi, Leonid Popryho, Inna Partin-Vaisband
Accurately predicting the performance of active radio frequency (RF) circuits is essential for modern wireless systems but remains challenging due to highly nonlinear behavior and the high computational cost of traditional simulation tools. Existing machine learning (ML) surrogates often require large datasets to generalize across various topologies or are not accurate on held-out circuits. This work presents a lightweight, data-efficient, and topology-aware graph neural network (GNN) framework for predicting key performance metrics of active RF circuit classes, such as low-noise amplifiers (LNAs), mixers, voltage-controlled oscillators (VCOs), power amplifiers (PAs), and voltage amplifiers (VAs). The proposed framework employs RFIC domain-informed feature indexing to enable cross-topology adaptability by cheap encoding of functional device semantics (e.g., differential pair and varactor transistors) and efficient knowledge transfer. The surrogate model represents circuits using device-terminal graph abstractions to preserve fine-grained connectivity and transistor-level symmetry. The final model is generalized to a wide variety of classes by being trained in parallel. Experimental results demonstrate accurate modeling of multimodal and heavy-tailed RF performance distributions, achieving an average mean relative error (MRE) of 2.71% across nineteen topologies, an improvement of 3.3x and 20x faster in training over prior art, and the generalization to held-out topologies is improved by ~26.2x. Furthermore, this work shows ~36x training data efficiency compared to state-of-the-art, demonstrating its effectiveness for scalable and deployment-ready RF design automation.
Anahita Asadi, Leonid Popryho, Inna Partin-Vaisband
Artificial intelligence (AI)-driven electronic design automation (EDA) techniques have been extensively explored for VLSI circuit design applications. Most recently, foundation AI models for circuits have emerged as a new technology trend. Unlike traditional task-specific AI solutions, these new AI models are developed through two stages: 1) self-supervised pre-training on a large amount of unlabeled data to learn intrinsic circuit properties; and 2) efficient fine-tuning for specific downstream applications, such as early-stage design quality evaluation, circuit-related context generation, and functional verification. This new paradigm brings many advantages: model generalization, less reliance on labeled circuit data, efficient adaptation to new tasks, and unprecedented generative capability. In this paper, we propose referring to AI models developed with this new paradigm as circuit foundation models (CFMs). This paper provides a comprehensive survey of the latest progress in circuit foundation models, unprecedentedly covering over 130 relevant works. Over 90% of our introduced works were published in or after 2022, indicating that this emerging research trend has attracted wide attention in a short period. In this survey, we propose to categorize all existing circuit foundation models into two primary types: 1) encoder-based methods performing general circuit representation learning for predictive tasks; and 2) decoder-based methods leveraging large language models (LLMs) for generative tasks. For our introduced works, we cover their input modalities, model architecture, pre-training strategies, domain adaptation techniques, and downstream design applications. In addition, this paper discussed the unique properties of circuits from the data perspective. These circuit properties have motivated many works in this domain and differentiated them from general AI techniques.