Design and Development of a Neuromorphic Silicon Suite: PVT Sensing, Stochastic LIF Inference, On-Chip STDP Learning, and Crossbar Programming

Stochastic spiking neurons trade exact arithmetic for controlled randomness, lowering area and tolerating input noise, which suits event-driven edge hardware. We present a compact, configurable stochastic leaky integrate-and-fire neuron in standard-cell CMOS on the SkyWater 130 nm process, released openly. A 16-bit configurable-polynomial linear-feedback shift register drives an eight-entry programmable activation table that sets a Bernoulli firing probability, and a saturating 16-bit leaky integrator with a programmable threshold and a refractory period of zero to seven cycles produces the spike train. All parameters are set through a sixteen-register serial interface, and the neuron runs from parallel inputs or entirely from the register file. From a model checked bit-exact against the register-transfer code, the period is 65535 states for a maximal-length polynomial and 63 for the shipped default, the eight-bit comparison value is uniform over the full period, and the per-entry firing probability equals the table value divided by 256. We also characterise a property a system-level model would not expose: the comparator output is serially correlated at short lags, with a negative lobe near lag eight, because the compared byte shifts by one bit each cycle; subsampling every sixteen cycles restores whiteness. Rate-coding sweeps show monotonic control of the output rate by the input weight and the threshold, and the refractory period caps the rate at one spike per refractory-plus-one cycles. The neuron occupies about 10,600 square micrometres at 70 per cent utilisation on a single Tiny Tapeout tile, meets 50 MHz timing with positive margin, and passes eighteen directed cocotb tests at register-transfer and gate level. All results are pre-silicon, from simulation and the open flow. The neuron is an openly released companion to a four-block neuromorphic suite reported separately.

Building on resistive communication, this paper presents a physics-based design of an on-chip neural network with multi-level memristive synapses supporting a dense spectrum of conductance states. Derived from ionic transport physics, we develop a state-variable model and quantify storable sub-levels under thermal noise, drift, and quantized conductance. We assemble these devices into a 1T1R crossbar fabric, derive the linear algebra of analog vector-matrix multiplication (VMM) under wire resistance, and design a differential synapse for signed weights. A multilayer pipeline executes inference, backpropagation, and weight updates physically in the analog domain. We derive the in-situ outer-product learning rule, its discretization onto the conductance lattice, and the resulting quantization noise. We provide energy, area, capacity, and inter-tile models, showing this substrate is ideally suited for large language models (LLMs). Our design eliminates weight movement, surpassing binary ReRAM and traditional CMOS. We detail the material stack (HfO_2-based), the FEOL/BEOL CMOS foundry-integration flow, a self-contained SPICE model, the complete memristive-FPGA neuromorphic system, and an in-memory self-attention engine with current-mode translinear softmax. Finally, a ternary BitNet datapath shows projected per-token efficiency orders of magnitude better than advanced CPUs or GPUs. The result is a self-contained hardware-native blueprint for a high-density, analog, in-memory neural processor.

Short-term plasticity (STP) is fundamental to temporal information processing in biological neural systems but remains difficult to realize efficiently in neuromorphic hardware. Memristive electrochemical random-access memory (ECRAM) devices naturally exhibit non-equilibrium ionic dynamics that produce transient conductance modulation; however, these behaviors are typically treated as undesirable variability or tolerated as side effects in memory-centric computing paradigms. In this work, we instead transform these volatile dynamics from a tolerated device artifact into a computational resource through a cross-layer device-circuit-system co-design framework. We introduce a delay-feedback leaky integrate-and-fire (LIF) neuron architecture co-designed with ECRAM synapses that exploits activity-dependent conductance modulation with negligible additional circuit overhead. The architecture integrates ECRAM-based synapses with a tunable delay-feedback spike-generation path, enabling transient device dynamics to directly modulate neuron excitability and synaptic efficacy. We used experimentally characterized ECRAM devices exhibiting transient conductance modulation (1.5 KOhms per spike) to develop a compact behavioral model suitable for circuit-level simulation. Circuit simulations demonstrate two key STP behaviors -- synaptic facilitation and intrinsic excitability modulation -- while consuming 2 pJ per spike, and the same device-driven mechanisms extend across multiple neuron topologies. Network-level analysis further demonstrates frequency-selective spike processing, allowing individual synapses to act as tunable temporal filters within spiking neural networks. This work demonstrates that non-equilibrium ECRAM dynamics can serve as a native hardware substrate for STP and temporal computation in neuromorphic circuits.