Advanced semiconductor nodes are pushing the limits of feature sizes and require metrology with sub-nm resolution without compromising on the throughput as needed for in-line process control. Recently, high-throughput scanning probe microscopy (SPM) based metrology and inspection tools capable of meeting these needs have been introduced to the market and qualified for use in HVM. While innovative measurement methods and tool architecture have allowed for a leap of improvement in throughput, the next step in further reducing imaging time can be obtained through the application of machine learning for enhancing the resolution of measured images for extraction of relevant parameters. In this work, we provide the general framework under which a neural network-based resolution enhancer is designed and used for SPM images. We showcase the effectiveness of this framework using measurements performed on Line/Space structures with a pitch of 200 nm. For the reusability of a pre-developed pre-trained model, we additionally leverage transfer learning and show that a new model for slightly differing structures can be re-trained and calibrated with a smaller data set of measurements performed on Line/Space structures with a pitch of 100 nm.
Process control of advanced semiconductor nodes is not only pushing the limits of metrology equipment requirements in terms of resolution and throughput but also in terms of the richness of data to be extracted to enable engineers to finetune the process steps for increased yield. The move towards 3D structures requires extraction of critical dimension parameters from structures which can vary largely from layer to layer. For in-line process control, the necessary automation forces the development of layer and equipment-specific dedicated image processing algorithms. Similarly, with the increase in stochastic defects in the EUV era, detection of defects at the nm scale requires the identification of features captured in low resolution to meet the throughput requirements of HVM fabs, which can again lead to custom algorithm development. With the emergence of ML-based image processing methods, this process of algorithm development for both cases can be accelerated. In this work, we provide the general framework under which the images obtained from high-speed scanning probe microscopy-based systems can be used to train a network for either feature detection for parameter extraction or defect identification.
Super-resolution can make inspection images appear sharper without preserving the evidence needed to detect a defect. We study this failure mode with a benchmark that separates reconstruction from detection and evaluates both at a predeclared low false-positive rate. Ten end-to-end repetitions combine independently generated line/space and contact-hole images with model training, calibration, clean controls, weak defects, and a held-out defect morphology. Every reconstruction is scored by the same local residual detector, while direct and jointly trained detectors form a separate comparison track. Reconstruction fidelity and inspection utility diverge: the two learned reconstruction models attain the highest structural similarity yet detect fewer defect pixels than bicubic interpolation in every paired repetition. A direct DeepLabV3 detector reaches 0.1984±0.0385 recall at 0.000174±0.000084 false-positive rate and satisfies the held-out feasibility criterion in all ten repetitions. An illustrative joint model, DPU-WaferSR, passes independent clean calibration but exceeds the held-out limit in all ten repetitions, demonstrating that calibration success does not guarantee transfer. Weak-defect recall remains near zero for every feasible method. Applying the unchanged policies to 4,591 public Carinthia-S masks further reveals large method-dependent shifts on real SEM texture. These results support a simple conclusion: super-resolution for inspection should be judged by preserved task evidence and operating-point transfer, not reconstruction quality alone.
Advanced semiconductor nodes drastically increased demand for Transmission Electron Microscopy (TEM), yet destructive sample preparation, slow imaging and high costs severely limit the availability of diverse datasets needed for downstream machine learning (ML). Synthetic data generation is becoming essential, but current generative models often miss TEM-specific noise, structural detail, and stochastic variability crucial for evaluation. We present a Denoising Diffusion Probabilistic Model (DDPM) framework for synthetic TEM image generation under extreme data scarcity. A progressive patch-based training strategy scales from low-resolution patches to full images, enabling from-scratch training with only 15 samples. We integrate a custom TrivialAugment adaptation, cross-process domain transfer, classifier guidance, and RePaint-style inpainting, culminating in full-image generation that preserves global structural and spatial relationships in compliance with FAB metrology requirements. Beyond synthesis, we repurpose DDPM feature representations for segmentation, partitioning encoder feature maps to obtain coherent region masks. Our synthetic images achieve up to MS-SSIM > 0.98 and qualitative expert assessment consistent with structural similarity results, facilitating downstream ML training for defect detection, segmentation, and metrology while preserving statistical and physical realism.
Johannes Boehm, Bappaditya Dey
Chemnitz University of Technology, Chemnitz, Germany · Interuniversity Microelectronics Centre (imec), Leuven, Belgium