Feature identification for parameter extraction and defect detection using machine learning

Advanced semiconductor nodes are pushing the limits of feature sizes and require metrology with sub-nm resolution without compromising on the throughput as needed for in-line process control. Recently, high-throughput scanning probe microscopy (SPM) based metrology and inspection tools capable of meeting these needs have been introduced to the market and qualified for use in HVM. While innovative measurement methods and tool architecture have allowed for a leap of improvement in throughput, the next step in further reducing imaging time can be obtained through the application of machine learning for enhancing the resolution of measured images for extraction of relevant parameters. In this work, we provide the general framework under which a neural network-based resolution enhancer is designed and used for SPM images. We showcase the effectiveness of this framework using measurements performed on Line/Space structures with a pitch of 200 nm. For the reusability of a pre-developed pre-trained model, we additionally leverage transfer learning and show that a new model for slightly differing structures can be re-trained and calibrated with a smaller data set of measurements performed on Line/Space structures with a pitch of 100 nm.

In semiconductor manufacturing, defect analysis is essential, but manual inspection cannot scale. However, existing automated inspection methods remain insufficient for root-cause analysis and process optimization. To this end, we present SePArate, a weakly supervised wafer defect segmentation method. SePArate enables pixel-level separation of patterns by leveraging only image-level annotations. It consists of a three-phase training: encoder pretraining, knowledge transfer to learn spatial cues, and training on synthetic mixed-defect data for accurate segmentation. Experiments demonstrate that SePArate outperforms the baselines.

Artificial intelligence is rapidly advancing materials characterization, yet most applications in electron microscopy rely solely on image contrast, overlooking the chemical and experimental context that shapes image formation. This limitation makes defect classification inherently ambiguous, as similar contrasts can arise from different materials or imaging conditions. Here we develop a context-aware learning framework that integrates image-derived contrast with metadata describing composition, beam energy, and detector geometry. Using a systematically constructed dataset of ~55 million simulated patches spanning 576 cases across 96 doped monolayer transition-metal dichalcogenides, we show that conditioning on contextual variables transforms defect classification from an ill-posed image-only task into a well-posed, physically grounded problem. The framework achieves over 98% accuracy on simulations and near-human agreement on experimental data, with a 94% reduction in posterior entropy. By emphasizing contextual grounding over architectural complexity, this approach links experimental image contrast to the underlying chemical and imaging conditions, supporting physically grounded defect assignments and a general pathway toward multimodal AI models for autonomous materials characterization.