CRAM-ER: Error-Resilient Spintronic Computational Random Access Memory for Scalable In-Memory Computation
Authors: Sohan Salahuddin Mugdho, Md. Shahedul Hasan, Brahmdutta Dixit, Yang Lv, Jian-Ping Wang, Cheng Wang
Abstract
Deep neural networks (DNNs) have achieved state-of-the-art performance across diverse domains. However, typical Von Neumann compute paradigms face severe memory bottlenecks. Emerging near-memory and compute-in-memory approaches alleviate this but incur significant peripheral overhead. Computational Random Access Memory (CRAM) based on MRAM enables in-situ logic without peripheral overhead, offering a dense, energy-efficient solution. However, probabilistic MRAM switching induces gate-level errors that limit the scalability and reliability of CRAM for accelerating DNN. Moreover, the large number of sequential MRAM writes severely constrains CRAM throughput. To address these challenges, we propose an error-resilient CRAM (CRAM-ER) architecture for scalable in-memory matrix-vector multiplications (MVMs). Our error-aware hardware-software co-design framework leverages a hybrid spintronic-CRAM + CMOS adder-tree architecture to mitigate the impact of device-level errors, demonstrating MVM functionality with high area and energy efficiency. We further develop an error-aware model fine-tuning and fine-grained error correction for enhanced error resilience. Evaluations of the CMOS+spintronic hybrid architecture on DNN benchmarks show near-lossless accuracy while reducing CRAM latency by up to 2 orders of magnitude, outperforming CPU/GPU+high-bandwidth DRAM in both energy efficiency and energy-delay product.
Traditional CPU, GPU, and NPU architectures are increasingly limited by the von Neumann bottleneck. While In-Memory Computing (IMC) using ReRAM crossbar arrays offers a high-density, energy-efficient alternative, its practical deployment is constrained through their non-idealities. Existing hardware-aware training frameworks often require training from scratch, which is computationally prohibitive for modern large-scale models. In this work, we propose a finetuning-based hardware-aware training algorithm that enables robust DNN deployment on ReRAM with minimal training overhead. Our approach mitigates I-V non-linearity by applying a range-shrunk sinh transformation and incorporates retention errors directly into a regularization loss during the finetuning process. We evaluate our framework across models and tasks such as image classification and question-answering (QA). Experimental results demonstrate that our method achieves similar accuracy on large-scale models like ResNet18 and DeiT-Tiny as the base model. In-case of ImageNet for MobileNetV3 families the technique has only less than 2% accuracy degradation. Further, applying the technique on the SQuAD v2 dataset results in only 1 point degradation of F-1 score.
Modern Deep Learning (DL) workloads are increasingly deployed in safety-critical domains, such as automotive systems and hyperscale data centers, where transient hardware faults pose a serious threat to system reliability. These workloads are highly memory-intensive, and their correct functionality strongly depends on model parameters stored in memory, which are typically protected using Error Correction Codes (ECCs). In this work, we study ECC's impact on such models and propose two lightweight alternatives to ECCs that achieve superior reliability. The first approach, MSET, selectively hardens the most vulnerable bits in CNN and ViT parameters, while the second approach, CEP, provides fine-grained protection for all parameter bits. Experimental results demonstrate that both methods significantly enhance the reliability of large CNNs and ViTs, mostly outperforming conventional Single Error Detection Double Error Correction (SECDED) ECC schemes, with no memory overhead and, in fact, with considerably lower area and delay characteristics when compared to SECDEC. Experimental results indicate that ViTs can be effectively protected by merely protecting their highest exponent bits in FP16 and FP32 representations. Furthermore, applying the CEP technique can guarantee the resilience of DNNs by up to one order of magnitude higher BERs, with a 3.5x lower area overhead and 7x faster decoder compared to SECDED ECC.
Mohammad Hasan Ahmadilivani, Marten Roots, Marco Restifo +3
Using Resistive Random Access Memory (RRAM) crossbars in Computing-in-Memory (CIM) architectures offers a promising solution to overcome the von Neumann bottleneck. Due to non-idealities like cell variability, RRAM crossbars are often operated in binary mode, utilizing only two states: Low Resistive State (LRS) and High Resistive State (HRS). Binary Neural Networks (BNNs) and Ternary Neural Networks (TNNs) are well-suited for this hardware due to their efficient mapping. Existing software projects for RRAM-based CIM typically focus on only one aspect: compilation, simulation, or Design Space Exploration (DSE). Moreover, they often rely on classical 8 bit quantization. To address these limitations, we introduce CIM-Explorer, a modular toolkit for optimizing BNN and TNN inference on RRAM crossbars. CIM-Explorer includes an end-to-end compiler stack, multiple mapping options, and simulators, enabling a DSE flow for accuracy estimation across different crossbar parameters and mappings. CIM-Explorer can accompany the entire design process, from early accuracy estimation for specific crossbar parameters, to selecting an appropriate mapping, and compiling BNNs and TNNs for a finalized crossbar chip. In DSE case studies, we demonstrate the expected accuracy for various mappings and crossbar parameters. CIM-Explorer can be found on GitHub.
Rebecca Pelke, José Cubero-Cascante, Nils Bosbach +5