LunaDrive: A Delay-Compensated High-Voltage GaN FET-Based Motor Driver for Dynamic Robots with Flat BLDC Motors

Accurate dynamics modeling of Brushless DC (BLDC) motors is fundamental to high-performance robotic joint control. This paper presents a Physics-Informed Neural Network (PINN) with a deep residual (ResNet) backbone that learns a continuous-time surrogate of the full six-state BLDC motor dynamics. Given simulation time, applied three-phase voltages, and excitation parameters as inputs, the network directly predicts all motor state variables -- rotor angle, angular velocity, three-phase currents, and winding temperature -- while simultaneously satisfying the governing electromechanical and thermal ODEs through a composite physics-data loss. A curriculum scheduling strategy gradually activates the physics penalty to prevent premature convergence. Training runs are completed in under two minutes on a standard CPU. Crucially, once trained, PINN inference achieves latencies of 0.1--22, mu s per query, up to 118x faster than conventional ODE solvers, making it suitable for real-time observer and control applications.

Agile flight tasks such as drone racing and pursuit-evasion require strong acceleration and precise turns, but the available thrust changes as the battery discharges and voltage drops under load. Conservative command limits make this variation easier to tolerate, at the cost of unused performance. We investigate how learned controllers can use that additional thrust while retaining the flight controller's voltage compensation and rate control. Our training simulator couples an identified load-transient battery model to rotor dynamics and firmware saturation. The feedforward policy receives filtered voltage during both training and deployment. Controlled ablations distinguish the benefit of a larger thrust-command range from that of voltage information. On a 38 g Crazyflie Brushless, the resulting policy reduces circle tracking error by 49% relative to stock-authority RL at 3.84 m/s, while preserving easy-task precision. Mean 20-lap race time decreases from 106.22 s to 95.24 s. Compared with a voltage-blind policy with the same increased authority, hardware error and race time are lower by 15.3% and 4.5%, respectively. In simulation, replacing the policy's voltage input with a recording from a different battery condition worsens hard-circle tracking, with a smaller, voltage-dependent effect in racing. Together, these results show where a simple voltage input complements existing actuator compensation in aggressive learned flight.

This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems. Conventional TCAD-based approaches are computationally intensive and insufficient for navigating the high-dimensional, nonlinear design space of advanced GaN devices. To address this, a physics-informed active learning framework is used to intelligently guide simulations, accelerating convergence while preserving accuracy. This ML-guided approach enables the discovery of optimal configurations by efficiently exploring key structural parameters -- most notably the GaN-to-AlGaN thickness ratio -- a long-standing focus of debate in device design. By systematically exploring key structural parameters, two optimized devices with aggressively scaled gate-to-drain lengths are identified. Single-fin, multi-channel simulations show that deviceD2, with a thinner GaN channel relative to the AlGaN barrier, achieves higher drive current. However, in a 300-fin configuration, deviceD1 outperforms deviceD2 by delivering 3.3,A at 0.49ohm on-resistance -- approximately 2$\times$ better -- despite slightly higher parasitics. Both devices operate in a normally-off mode. Based on an application-specific figure of merit, deviceD1 achieves 5,pC$\cdot$ohm, demonstrating 2$\times$ greater switching efficiency than deviceD2, while both designs outperform industrial benchmarks from different performance standpoints.