Pushing the Limits of Inverse Lithography with Generative Reinforcement Learning

In semiconductor manufacturing, lithography projects circuit layouts onto silicon wafers through an optical mask. As circuit features shrink below the wavelength of light, optical diffraction causes the printed patterns to deviate from their intended layouts. Inverse Lithography Technology (ILT) addresses this challenge by generating optimized masks that enhance the fidelity of pattern transfer onto wafers. While ILT resembles an image synthesis task, its reliance on explicit physical metrics for mask evaluation limits the applicability of existing generative models. We introduce LithoGRPO, an ILT framework that integrates the flow-matching paradigm with GRPO-based reinforcement learning (RL) fine-tuning, enabling efficient exploration of diverse masks for a given target layout. Unlike purely generative or optimization-based approaches, RL in LithoGRPO exploits the explicitly defined, physics-based reward function of ILT, enabling optimization under complex, process-aware constraints. To the best of our knowledge, this is the first framework that unifies flow matching and RL for mask optimization. To improve RL sampling efficiency, we propose a fast shot-counting algorithm for manufacturability evaluation, achieving over 130x speedup while preserving the mask ranking of the traditional shot-count metric. Extensive experiments demonstrate that LithoGRPO achieves state-of-the-art performance over both optimization-based and learning-based methods, while maintaining efficient mask generation.

Gradient-based inverse lithography technology~(ILT) for extreme ultraviolet~(EUV) masks is presented. A novel framework treats the differentiable waveguide method and the recently proposed waveguide neural operator~(WGNO) as end-to-end physics engines, recovering the permittivity of the absorber of the mask through automatic differentiation of the full forward diffraction model. Numerical experiments on realistic 2D and 3D absorbers of the mask (TaBN, La, U) at $λ{=}11.2$~nm show that the considered ILT methods make it possible to obtain a mask structure that achieves the desired field on the wafer.

As semiconductor technology nodes scale, computational lithography is essential for ensuring yield and performance. However, lithography is a continuous physical process involving mask optimization, optical imaging, resist exposure, and development, which existing models fail to capture. To overcome this limitation, we present LithoDreamer, the first physics-informed World Model (WM) framework for computational lithography, which formulates the ``Layout-Mask-Resist Image-After Development Image (ADI)'' pipeline as a decision-driven multi-step evolution system. LithoDreamer captures feature changes between adjacent states to model stage-specific physics-informed latent spaces, in which it controls process intervention exploration and drives subsequent state transitions. To achieve interpretable intervention optimization without continuous supervision, we propose a contrastive variational optimization paradigm that contrasts the latent differences between intervention paths with variational evolution constraints, guiding the model to generate evolutions consistent with real lithography physics. Experiments show LithoDreamer achieves state-of-the-art performance in forward evolution and inverse planning. Our lithography dataset is publicly available at GitHub (https://github.com/7jiangyq/lithodreamer.git).