cs.LGFeb 22, 2026

Pushing the Limits of Inverse Lithography with Generative Reinforcement Learning

Authors: Haoyu Yang, Haoxing Ren

Organizations: NVIDIA Corp. Austin, TX, USA

Abstract

Inverse lithography (ILT) is critical for modern semiconductor manufacturing but suffers from highly non-convex objectives that often trap optimization in poor local minima. Generative AI has been explored to warm-start ILT, yet most approaches train deterministic image-to-image translators to mimic sub-optimal datasets, providing limited guidance for escaping non-convex traps during refinement. We reformulate mask synthesis as conditional sampling: a generator learns a distribution over masks conditioned on the design and proposes multiple candidates. The generator is first pretrained with WGAN plus a reconstruction loss, then fine-tuned using Group Relative Policy Optimization (GRPO) with an ILT-guided imitation loss. At inference, we sample a small batch of masks, run fast batched ILT refinement, evaluate lithography metrics (e.g., EPE, process window), and select the best candidate. On LithoBench dataset, the proposed hybrid framework reduces EPE violations under a 3,nm tolerance and roughly doubles throughput versus a strong numerical ILT baseline, while improving final mask quality. We also present over 20% EPE improvement on ICCAD13 contest cases with 3×\times speedup over the SOTA numerical ILT solver. By learning to propose ILT-friendly initializations, our approach mitigates non-convexity and advances beyond what traditional solvers or GenAI can achieve.

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