Organizations: University at Buffalo, Buffalo, NY, USA · IBM T. J. Watson Research Center, Yorktown Heights, NY, USA · Villanova University, Villanova, PA, USA
As feature sizes shrink to the nanometer scale, accurately transferring circuit patterns from photomasks to silicon wafers becomes increasingly challenging. Optical proximity correction (OPC) is widely used to ensure pattern fidelity and manufacturability. Recent generative mask optimization models based on encoder-decoder architecture can synthesize near-optimal masks, serving as fast machine learning (ML) surrogates for traditional OPC. However, these models often fail to capture the geometric transformations from target layouts to mask patterns, leading to suboptimal quality. In this work, we formulate mask generation as a sequence of morphological operations on local layout features and propose MorphOPC, a multi-scale hierarchical model with neural morphological modules to learn these transformations. Experiments on edge-based OPC and ILT benchmarks across metal and via layers show that MorphOPC consistently outperforms state-of-the-art methods, achieving higher printing fidelity and lower manufacturing cost, demonstrating strong potential for scalable mask optimization.
Figures & tables
Figure 1. (a) MorphOPC learns morphological operations on local features for mask generation. (b) MorphOPC supports both pixel-based (ILT) and edge-based (EBOPC) OPC across metal and via layers.
Figure 2. Illustration of MorphOPC architecture.
Figure 3. Views of morphological outputs relative to the input convolutional feature maps at (a) layer-2 and (b) layer-4.
Model
GAN-OPC
LithoBench (MetalSet)
LithoBench (ViaSet)
MaskOpt (EBOPC)
MaskOpt (ILT)
ℓ2
EPE
PVB
Shot
ℓ2
EPE
PVB
Shot
ℓ2
EPE
PVB
Shot
ℓ2
EPE
PVB
Shot
ℓ2
EPE
PVB
Shot
GAN-OPC
8690
13.8
9183
633
39512
3.9
42230
490
21219
0.3
705
148
66012
16.6
6732
111
65158
0.4
8749
376
DAMO
8472
14.7
8949
862
33704
3.8
42306
532
5984
8.7
9899
180
58661
15.3
7072
96
58972
0.4
9082
404
NeuralILT
8658
14.2
10336
1392
38065
4.1
43753
489
7104
8.6
9546
281
-
-
-
-
48643
5.0
6749
187
CFNO
9020
13.1
10297
461
43443
3.6
44738
350
20325
0.7
2609
76
-
-
-
-
61968
0.3
8613
291
MorphOPC
8107
13.6
9013
509
31915
4.1
41300
499
4974
8.2
9549
274
53642
4.9
8455
108
46860
4.0
6971
215
Table 1. Comparison with learning-based models across OPC benchmarks.
ICCAD 2013 Benchmark (Pretrained on GAN-OPC)
Test
GAN-OPC
DAMO
NeuralILT
CFNO
MorphOPC
ℓ2
EPE
PVB
shot
ℓ2
EPE
PVB
Shot
ℓ2
EPE
PVB
shot
ℓ2
EPE
PVB
Shot
ℓ2
EPE
PVB
Shot
1
70120
9
55466
137
67407
8
49841
184
67628
10
64104
404
69332
6
49298
135
55356
10
51836
126
2
47234
8
46367
114
46291
8
46435
138
45027
7
52834
303
50620
5
53432
110
42015
8
46407
120
3
103656
6
85025
202
109048
6
67882
262
134856
9
74962
469
127178
0
74429
193
94007
1
64462
174
4
30165
0
24118
50
28385
1
24195
54
33372
2
36731
177
34783
1
36912
47
24585
1
23587
41
Table 2. Test comparison on ICCAD 2013 contest benchmark.
Larger Design Benchmark (Pretrained on GAN-OPC)
Test
GAN-OPC
DAMO
NeuralILT
CFNO
MorphOPC
ℓ2
EPE
PVB
shot
ℓ2
EPE
PVB
shot
ℓ2
EPE
PVB
shot
ℓ2
EPE
PVB
shot
ℓ2
EPE
PVB
shot
11
110163
18
106714
311
96853
15
104298
340
108584
20
112203
749
124190
13
111745
259
94579
13
109699
283
12
104544
13
104633
288
83858
11
99311
282
89455
12
109796
551
103606
9
123921
258
79698
12
107312
237
13
159272
17
132406
346
147885
15
125778
404
142771
17
135333
821
177046
11
141396
304
134747
12
138711
314
14
86750
4
81864
196
65697
3
80406
215
68567
5
92746
499
83450
3
104105
168
62043
5
81967
196
Table 3. Test comparison on larger designs.
Figure 4. Test result visualization. Rows correspond to ten test cases from (a) the ICCAD 2013 benchmark, and (b) the MaskOpt edge-based OPC set: from top to bottom, each row corresponds to tiles of different standard cells, including AOI21_X2, BUF_X16, OAI221_X2, OR4_X2, BUF_X32, NAND3_X4, NOR3_X4, AND3_X1, CLKBUF_X1, and OR3_X1.
Figure 5. Average running time on ICCAD 2013 benchmark.
Ablation Experiment
GAN-OPC
ICCAD 2013 Benchmark
MSE
ℓ2
EPE
PVB
Shot
ℓ2
EPE
PVB
Shot
MorphOPC
0.0046
8107
13.6
9013
509
42377
2.3
44555
119.7
C1. MorphBasic ✗
0.0047
8163
13.9
9176
514
47969
2.4
45484
126.1
C2. MultiScaleMorph ✗
0.0052
8404
13.9
9233
528
47651
2.3
50271
121.0
C3. MorphBasic,MultiScaleMorph ✗
0.0056
8679
14.7
10571
678
47304
2.7
43679
151.2
Table 4. Ablation Results.
MorphOPC Scale Factor
GAN-OPC
ICCAD 2013
MSE
ℓ2
EPE
PVB
Shot
ℓ2
EPE
PVB
Shot
s=4
0.0049
8410
14.4
9312
506
44251
2.3
44554
123.3
s=8
0.0046
8107
13.6
9013
509
42377
2.3
44555
119.7
s=16
0.0052
7877
14.4
9385
530
44161
1.7
47761
113.7
s=32
0.0068
8833
14.0
9234
753
53634
1.9
44442
97.8
Table 5. Impact of scale factor on model performance.
Model
MultiILT
CurvyILT
ℓ2
EPE
PVB
Shot
Slowdown
ℓ2
EPE
PVB
Shot
Speedup
GAN-OPC
29239
3.6
44501
527
2.04x
27865
3.6
42657
526
3.97%
DAMO
29165
3.6
44423
531
2.00x
27753
3.6
42654
526
4.29%
NeuralILT
28927
3.6
44666
507
2.00x
27685
3.6
42919
516
4.44%
CFNO
29266
3.6
44696
490
1.99×
27813
3.6
42582
492
4.21%
MorphOPC
28902
3.6
44309
527
1.98×
27501
3.6
42545
522
4.52%
Table 6. Initialize optimization-based OPC with model-generated mask on ICCAD 2013 benchmark.
Semiconductor manufacturing uses process engineering, metrology, and automation to make chips reliably, improve yield, and meet tight device requirements.
In semiconductor manufacturing, lithography projects circuit layouts onto silicon wafers through an optical mask. As circuit features shrink below the wavelength of light, optical diffraction causes the printed patterns to deviate from their intended layouts. Inverse Lithography Technology (ILT) addresses this challenge by generating optimized masks that enhance the fidelity of pattern transfer onto wafers. While ILT resembles an image synthesis task, its reliance on explicit physical metrics for mask evaluation limits the applicability of existing generative models. We introduce LithoGRPO, an ILT framework that integrates the flow-matching paradigm with GRPO-based reinforcement learning (RL) fine-tuning, enabling efficient exploration of diverse masks for a given target layout. Unlike purely generative or optimization-based approaches, RL in LithoGRPO exploits the explicitly defined, physics-based reward function of ILT, enabling optimization under complex, process-aware constraints. To the best of our knowledge, this is the first framework that unifies flow matching and RL for mask optimization. To improve RL sampling efficiency, we propose a fast shot-counting algorithm for manufacturability evaluation, achieving over 130x speedup while preserving the mask ranking of the traditional shot-count metric. Extensive experiments demonstrate that LithoGRPO achieves state-of-the-art performance over both optimization-based and learning-based methods, while maintaining efficient mask generation.
Yao Lai, Xuyuan Xiong, Zeyue Xue +7
The University of Hong Kong, Hong Kong · University of Cambridge, Cambridge, UK · The Chinese University of Hong Kong, Hong Kong +2
Inverse lithography (ILT) is critical for modern semiconductor manufacturing but suffers from highly non-convex objectives that often trap optimization in poor local minima. Generative AI has been explored to warm-start ILT, yet most approaches train deterministic image-to-image translators to mimic sub-optimal datasets, providing limited guidance for escaping non-convex traps during refinement. We reformulate mask synthesis as conditional sampling: a generator learns a distribution over masks conditioned on the design and proposes multiple candidates. The generator is first pretrained with WGAN plus a reconstruction loss, then fine-tuned using Group Relative Policy Optimization (GRPO) with an ILT-guided imitation loss. At inference, we sample a small batch of masks, run fast batched ILT refinement, evaluate lithography metrics (e.g., EPE, process window), and select the best candidate. On LithoBench dataset, the proposed hybrid framework reduces EPE violations under a 3,nm tolerance and roughly doubles throughput versus a strong numerical ILT baseline, while improving final mask quality. We also present over 20% EPE improvement on ICCAD13 contest cases with 3× speedup over the SOTA numerical ILT solver. By learning to propose ILT-friendly initializations, our approach mitigates non-convexity and advances beyond what traditional solvers or GenAI can achieve.
As semiconductor technology nodes scale, computational lithography is essential for ensuring yield and performance. However, lithography is a continuous physical process involving mask optimization, optical imaging, resist exposure, and development, which existing models fail to capture. To overcome this limitation, we present LithoDreamer, the first physics-informed World Model (WM) framework for computational lithography, which formulates the ``Layout-Mask-Resist Image-After Development Image (ADI)'' pipeline as a decision-driven multi-step evolution system. LithoDreamer captures feature changes between adjacent states to model stage-specific physics-informed latent spaces, in which it controls process intervention exploration and drives subsequent state transitions. To achieve interpretable intervention optimization without continuous supervision, we propose a contrastive variational optimization paradigm that contrasts the latent differences between intervention paths with variational evolution constraints, guiding the model to generate evolutions consistent with real lithography physics. Experiments show LithoDreamer achieves state-of-the-art performance in forward evolution and inverse planning. Our lithography dataset is publicly available at GitHub (https://github.com/7jiangyq/lithodreamer.git).