LP5X-PIM Sim: A High-Fidelity HW/SW Integrated Simulator for LPDDR5X-PIM
Authors: SangHoon Cha, Jaewan Choi, Byeongho Kim, Yoonah Paik, Sukhan Lee, Kyomin Sohn
Organizations: Samsung Electronics, South Korea
Abstract
This tech note describes the architecture and execution results of the LPDDR5X-PIM simulator, developed by Samsung Electronics. Based on the latest research and internal specifications, the simulator provides a high-fidelity model of both the hardware data paths and the software control layers of the LPDDR5X-PIM block. This integrated hardware-software simulation approach enables precise evaluation of system performance and energy efficiency while maximizing PIM resource utilization. We have refined existing simulation frameworks to align with actual hardware implementation, ensuring consistent behavioral accuracy. Further technical details regarding the specific architecture and circuit design of the LPDDR5X-PIM will be disclosed in future publications
Edge neuromorphic systems need compact, configurable hardware that combines probabilistic inference, local learning, and an interface to emerging analogue memory. We present four interface-compatible digital IP blocks implemented as standard-cell CMOS on the SkyWater 130 nm process: a process, voltage and temperature (PVT) sensor built from five selectable ring oscillators that also provides a jitter-based true-random-number generator and a frequency-bounds health monitor; a stochastic leaky integrate-and-fire (LIF) neuron with a configurable LFSR, a programmable activation table, and a refractory period; an on-chip spike-timing-dependent plasticity (STDP) controller with a programmable curve and reward-modulated, eligibility-trace, and anti-Hebbian modes; and a memristive-crossbar controller supporting forming, set, reset, read, and automated current-voltage sweep with current-compliance limiting and half-select biasing. All four blocks share a common serial peripheral interface (SPI) register file; the sensor also exposes a parallel readout. Each occupies a single tile at a 50 MHz target. The suite was verified with 99 cocotb tests at register-transfer and gate level (all passing) and taken through an open standard-cell flow, then submitted for tapeout via the Tiny Tapeout shared-silicon programme. Mapped to the open cell library, each block occupies a post-synthesis cell area of 9.3 to 10.6 thousand square micrometres, places at 61 to 70 per cent tile utilisation, meets the 50 MHz constraint with positive setup and hold margin after clock-tree synthesis, and draws an estimated 0.64 to 0.70 mW under a default switching-activity assumption. The contribution is a coherent, openly released set of building blocks unified by one register interface and one verification flow. All results are from simulation and the implementation flow; no fabricated silicon is reported.
Accurate power estimation is important for understanding and optimizing CPU power behavior, yet practical workflows often rely on simulation-derived information or post-silicon analysis. In this work, we present BigPower, a hierarchical source-level surrogate model for fine-grained module-level power estimation during CPU design. BigPower leverages large language model-based representations together with architectural hierarchy, module connectivity, configuration parameters, and workload context to estimate module-level power consumption directly from source-level design information, without requiring additional simulation during inference. Experimental results in the open-source XiangShan processor family demonstrate practical fine-grained power estimation across diverse configurations and workloads, offering an efficient alternative to conventional simulation-based workflows.
This paper proposes a co-optimization framework that jointly optimizes SRAM architecture and transistor sizing using equivalent circuit models. The framework simplifies inactive SRAM cells into equivalent RC loads and static power models, achieving up to 61.4× simulation speedup while maintaining high fidelity (read/write delay error <0.22%, power error <1.68%). A joint search space encompassing architecture parameters and device sizing integrates seven algorithms including SA, PSO, Bayesian Optimization variants, and multi-objective evolutionary algorithms. Based on FreePDK45, ablation experiments confirm complementary gains from architecture selection and transistor sizing. Among all algorithms, MOEA/D achieves the best Figure of Merit (8.2721), yielding 6.2% improvement in SNM, 73.6% reduction in area, and 42.3% reduction in peak power. The framework is publicly available at https://github.com/W1Y1K1/OpenOpt.