Physics-informed generative AI for semiconductor manufacturing: Enforcing hard physical constraints in generative models by construction

As semiconductor technology nodes scale, computational lithography is essential for ensuring yield and performance. However, lithography is a continuous physical process involving mask optimization, optical imaging, resist exposure, and development, which existing models fail to capture. To overcome this limitation, we present LithoDreamer, the first physics-informed World Model (WM) framework for computational lithography, which formulates the ``Layout-Mask-Resist Image-After Development Image (ADI)'' pipeline as a decision-driven multi-step evolution system. LithoDreamer captures feature changes between adjacent states to model stage-specific physics-informed latent spaces, in which it controls process intervention exploration and drives subsequent state transitions. To achieve interpretable intervention optimization without continuous supervision, we propose a contrastive variational optimization paradigm that contrasts the latent differences between intervention paths with variational evolution constraints, guiding the model to generate evolutions consistent with real lithography physics. Experiments show LithoDreamer achieves state-of-the-art performance in forward evolution and inverse planning. Our lithography dataset is publicly available at GitHub (https://github.com/7jiangyq/lithodreamer.git).

Modeling physical systems in a generative manner offers several advantages, including the ability to handle partial observations, generate diverse solutions, and address both forward and inverse problems. Recently, diffusion models have gained increasing attention in the modeling of physical systems, particularly those governed by partial differential equations (PDEs). However, diffusion models only access noisy data $\boldsymbol{x}_t$ at intermediate steps, making it infeasible to directly enforce constraints on the clean sample $\boldsymbol{x}_0$ at each noisy level. As a workaround, constraints are typically applied to the expectation of clean samples $\mathbb{E}[\boldsymbol{x}_0|\boldsymbol{x}_t]$, which is estimated using the learned score network. However, imposing PDE constraints on the expectation does not strictly represent the one on the true clean data, known as Jensen's Gap. This gap creates a trade-off: enforcing PDE constraints may come at the cost of reduced accuracy in generative modeling. To address this, we propose a simple yet effective post-hoc distillation approach, where PDE constraints are not injected directly into the diffusion process, but instead enforced during a post-hoc distillation stage. We term our method as Physics-Informed Distillation of Diffusion Models (PIDDM). This distillation not only facilitates single-step generation with improved PDE satisfaction, but also support both forward and inverse problem solving and reconstruction from randomly partial observation. Extensive experiments across various PDE benchmarks demonstrate that PIDDM significantly improves PDE satisfaction over several recent and competitive baselines, such as PIDM, DiffusionPDE, and ECI-sampling, with less computation overhead. Our approach can shed light on more efficient and effective strategies for incorporating physical constraints into diffusion models.

Chip placement plays an important role in physical design. While generative models like diffusion models offer promising learning-based solutions, current methods have the following limitations: they use random synthetic data for pre-training, require long sampling times, and often result in overlaps due to their dependence on gradient-based solvers during the sampling process. To overcome these issues, we propose FlowPlace, which features mask-guided synthetic data generation, flow-based efficient training with flexible prior injection, and hard constraint sampling for overlap-free layouts. Experiments on OpenROAD and ICCAD 2015 benchmarks show FlowPlace achieves better PPA metrics, 10-50$\times$ faster sampling efficiency, and zero overlaps.