Gen-Fab: A Variation-Aware Generative Model for Predicting Fabrication Variations in Nanophotonic Devices
Organizations: Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada. · Digital Technologies Research Center, National Research Council of Canada, Ottawa, ON, Canada. · Quantum and Nanotechnologies Research Center, National Research Council of Canada, Ottawa, ON, Canada.
Abstract
Silicon photonic devices often exhibit fabrication-induced variations such as over-etching, underetching, and corner rounding, which can significantly alter device performance. These variations are non-uniform and are influenced by feature size and shape. Accurate digital twins are therefore needed to predict the range of possible fabricated outcomes for a given design. In this paper, we introduce Gen-Fab, a conditional generative adversarial network (cGAN) based on Pix2Pix to predict and model uncertainty in photonic fabrication outcomes. The proposed method takes a design layout (in GDS format) as input and produces diverse high-resolution predictions similar to scanning electron microscope (SEM) images of fabricated devices, capturing the range of process variations at the nanometer scale. To enable one-to-many mapping, we inject a latent noise vector at the model bottleneck. We compare Gen-Fab against three baselines: (1) a deterministic U-Net predictor, (2) an inference-time Monte Carlo Dropout U-Net, and (3) an ensemble of varied U-Nets. Evaluations on an out-of-distribution dataset of fabricated photonic test structures demonstrate that Gen-Fab outperforms all baselines in both accuracy and uncertainty modeling. An additional distribution shift analysis further confirms its strong generalization to unseen fabrication geometries. Gen-Fab achieves the highest intersection-over-union (IoU) score of 89.8%, outperforming the deterministic U-Net (85.3%), the MC-Dropout U-Net (83.4%), and varying U-Nets (85.8%). It also better aligns with the distribution of real fabrication outcomes, achieving lower Kullback-Leibler divergence and Wasserstein distance.
Figures & tables
| Model Type | Matching Type | C25 | C50 | C100 | Square | T50 | T100 | Average IoU |
|---|---|---|---|---|---|---|---|---|
| U-Net | - | 75.6 | 81.3 | 93.3 | 92.7 | 83.4 | 85.5 | 85.3 |
| MC-Dropout U-Net | Random | 72.8 | 81.0 | 84.6 | 87.3 | 83.0 | 75.3 | 80.7 |
| Varying U-Nets | Random | 75.9 | 82.9 | 92.0 | 92.4 | 85.0 | 83.1 | 85.2 |
| Gen-Fab | Random | 78.2 | 87.3 | 94.3 | 94.4 | 90.4 | 87.6 | 88.7 |
| MC-Dropout U-Net | Greedy | 76.3 | 84.4 | 85.9 | 90.0 | 85.1 | 78.7 | 83.4 |
| Varying U-Nets | Greedy | 77.1 | 83.2 | 92.3 | 92.7 | 85.5 | 84.0 | 85.8 |
| Structure | KL-Divergence | Wasserstein Distance | ||||
|---|---|---|---|---|---|---|
| MC U-Net | Varying U-Nets | Gen-Fab | MC U-Net | Varying U-Nets | Gen-Fab | |
| Cross-25 | 2.5754 | 0.9471 | 0.2657 | 0.3010 | 0.1831 | 0.1693 |
| Cross-50 | 1.6990 | 0.8150 | 0.6949 | 0.1803 | 0.1498 | 0.0980 |
| Cross-100 | 1.4570 | 0.1939 | 0.1859 | 0.1501 | 0.0692 | 0.0536 |
| Square | 1.2188 | 0.2711 | 0.1277 | 0.1252 | 0.0673 | 0.0542 |
| Target-50 | 1.4543 | 0.5339 | 0.2335 | 0.1633 | 0.1281 | 0.1249 |
Appendix figures & tables2 assets
Supplementary material from the paper’s appendix.
Appendix
Manufacturing
Manufacturing research develops methods and systems to design, plan, automate, monitor, and improve industrial production.
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