Wafer-Level Etch Spatial Profiling for Process Monitoring from Time-Series with Time-LLM
Organizations: Electronics and Telecommunications Research Institute, Daejeon, Republic of Korea
Abstract
Understanding wafer-level spatial variations from in-situ process signals is essential for advanced plasma etching process monitoring. While most data-driven approaches focus on scalar indicators such as average etch rate, actual process quality is determined by complex two-dimensional spatial distributions across the wafer. This paper presents a spatial regression model that predicts wafer-level etch depth distributions directly from multichannel in-situ process time series. We propose a Time-LLM-based spatial regression model that extends LLM reprogramming from conventional time-series forecasting to wafer-level spatial estimation by redesigning the input embedding and output projection. Using the BOSCH plasma-etching dataset, we demonstrate stable performance under data-limited conditions, supporting the feasibility of LLM-based reprogramming for wafer-level spatial monitoring.
Figures & tables
| MSE (shape) | |||||
|---|---|---|---|---|---|
| MSE (mean) | |||||
| MSE (shape) | MSE (mean) | MAE (etch) | ||
|---|---|---|---|---|
| 12 | 37 | |||
| 24 | 49 | |||
| 48 | 73 | |||
| 72 | 97 |
| Backbone | L | Ch | MSE (shape) | MSE (mean) | MAE (etch) |
|---|---|---|---|---|---|
| LLaMA | 12 | 49 | |||
| LLaMA | 6 | 49 | |||
| LLaMA | 6 | 73 | |||
| GPT2 | 12 | 73 | |||
| GPT2 | 6 | 73 | |||
| Global Mean Baseline | |||||
Semiconductor Manufacturing
Semiconductor manufacturing uses process engineering, metrology, and automation to make chips reliably, improve yield, and meet tight device requirements.
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